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日本日立公司开发出高度耐辐射晶体管——高速计算机必不可少的双极高速通用晶体管,可以经受得住10000Gy即人致死剂量2000倍的辐射。只要氧化硅膜受到辐照,晶体管氧化硅膜上就产生正电荷,这种正电荷会使晶体管电流放大这一主要功能严重恶化。日立公司给氧化硅膜注入了大量的砷化物离子,防止了这些正电荷的产生。因此,即使在反应堆压力壳内受到剂量高达10000Gy/年的辐射,新晶体管的电流放大能力仍可保持在原放大能力的90%
Japan’s Hitachi has developed a highly radiation-resistant transistor - a high-speed computer essential bipolar high-speed general-purpose transistors, can withstand 10000Gy that human lethal dose of 2000 times the radiation. As long as the silicon oxide film is irradiated, a positive charge is generated on the silicon oxide film of the transistor, and this positive charge seriously deteriorates the main function of amplifying the transistor current. Hitachi injected a large amount of arsenide ions into the silicon oxide film to prevent these positive charges from being generated. As a result, the new transistor’s current amplification capability can be maintained at 90% of the original amplification capability even when exposed to radiation up to 10000 Gy / year in the reactor pressure vessel