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我们在SiH_4-NH_3体系PECVD氮化硅工艺研究(使用低浓度硅烷、石墨作电极、淀积2时硅片)的基础上。研制了适于淀积3时硅片的PECVD设备(使用高浓度硅烷、不锈钢作电极、装片量为50片/炉).经过实验。获得了最佳工艺条件.所淀积的氮化硅膜性质符合半导体器件表面钝化要求.该项工艺已正式用于3时工艺生产线上的表面钝化.实践证明,工艺稳定,效果良好,经过该项工艺作表面钝化的电路,通过了C级考核标准.经兄弟单位推广应用。器件表面钝化效果亦很好.
Based on the SiH_4-NH_3 system PECVD silicon nitride process (using a low concentration of silane, graphite as the electrode, deposition of 2-time silicon). The PECVD device for 3-wafer deposition was developed (using high-concentration silane and stainless steel as electrodes and the loading volume was 50 cells / oven). Obtained the best process conditions.The deposited silicon nitride film properties in line with the semiconductor device surface passivation requirements.This process has been formally used in 3 o’clock process line surface passivation.Practice has proved that the process is stable and the effect is good, After the process for the surface passivation of the circuit, passed the C-level assessment standards. Promote the application by the brothers. Device passivation effect is also very good.