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高分辨率X射线衍射技术被用来分析基于InP衬底的应变的InGaAs和InAlAs单层材料和应变补偿的InGaAs/InAlAs超晶格材料。通过倒空间mapping得到的单层材料的错向角大约为10-3度,可以忽略不计。通过摇摆曲线得到了单层材料的组分和体失配度,接着单层材料的结果被用来分析在相同的条件下利用MBE技术生长的超晶格材料。利用倒空间mapping精确得到了超晶格的平均垂直失配度和各层的厚度,通过X射线模拟软件得到的超晶格材料的模拟曲线和实测曲线吻合的很好。
High-resolution X-ray diffraction techniques were used to analyze both InGaAs and InAlAs single layer materials based on InP substrate strain and strain compensated InGaAs / InAlAs superlattice materials. The error angle of the single-layer material obtained by the inverted space mapping is about 10-3 degrees, negligible. The composition and bulk mismatch of the monolayer material are obtained by the rocking curve. The results of the monolayer material are then used to analyze the superlattice material grown by the MBE technique under the same conditions. The average vertical mismatch of superlattices and the thickness of each layer were accurately obtained by using space mapping. The simulation curves of superlattice materials obtained by X-ray simulation software were in good agreement with the measured curves.