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用椭圆偏振仪、俄歇电子能谱仪(AES)和X-光电子谱仪(XPS)等对经pH=7±0.05的H_2O_2-NH_40H溶液化学腐蚀或用NH_4OH:H_20=1:10和HCl:H_2O=1:1进行清洗后的GaAs表面残余氧化层厚度、折射率、纵向组分分布和Ga(3d)与As(3d)结合能变化等进行测定.三者实验结果对应很好.化学腐蚀后的GaAs表面有一层氧化物层,然后是氧化物与GaAs混合的过渡层,直至GaAs衬底.从NH_4OH:H_2O=1:10清洗后GaAs表面残余氧化层厚度,表面C吸附量和Ga/As的波动看,它均比用HCl:H_2O=1:1清洗为优,故用它作为GaAs在化学腐蚀后的清洗是可取的.
The H_2O_2-NH_40H solution with pH = 7 ± 0.05 was chemically etched by ellipsometer, Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) or with NH_4OH: H_2O = 1:10 and HCl: H_2O = 1: 1, the residual oxide layer thickness, refractive index, longitudinal component distribution and the binding energies of Ga (3d) and As (3d) on the surface of GaAs were measured.The results of the three experiments corresponded well. After the GaAs surface has a layer of oxide, followed by a mixed oxide and GaAs transitional layer until the GaAs substrate from NH_4OH: H_2O = 1:10 after cleaning GaAs surface residual oxide thickness, surface C adsorption capacity and Ga / As fluctuations, it is better than using HCl: H_2O = 1: 1 cleaning, so use it as GaAs cleaning after chemical etching is desirable.