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本文描述一种采用单层AZ型光刻胶紫外曝光法,实现金属化图形剥离加工的工艺。这个工艺包含抗蚀剂层可在曝光前也可在曝光后于氯苯或其它芳香族溶剂,如甲苯或苯中浸渍处理,浸渍时间可预定。显影后,抗蚀剂剖面变成适于金属化图形剥离加工的悬伸梁结构。似乎是溶剂和低分子量的树脂从AZ抗蚀剂中溶除是造成显影速度存在差别的原因。另外,浸渍时间及其温度的影响表明,浸渍是一个扩散过程。
This article describes a single layer AZ type photoresist UV exposure method to achieve the metal pattern stripping process. This process involves the resist layer being either pre-exposed or immersed in chlorobenzene or other aromatic solvent such as toluene or benzene after exposure, and the impregnation time can be predetermined. After development, the resist profile becomes an overhanging beam structure suitable for metallization pattern lift-off processes. It appears that the solvent and low molecular weight resin are removed from the AZ resist resulting in differences in development speed. In addition, the effect of immersion time and temperature indicates that impregnation is a diffusion process.