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报道了具有双ｎ型结构的ＧａＰ绿色发光二极管在汽相掺杂、液相外延过程中，对硫（Ｓ）掺杂浓度的控制和监测方法，并研究了掺Ｓ浓度对发光效率的影响。
The method for controlling and monitoring the doping concentration of sulfur (S) during the vapor phase doping and liquid phase epitaxy of GaP green light emitting diode with double n structure was reported. The effect of S concentration on the luminescent efficiency was also studied.