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本文分析了碲镉汞 (HgCdTe或MCT)中Te沉淀相、Hg空位的拉曼散射峰 ,以及碲镉汞表面完整性与它的二级拉曼散射峰的关系。MCT中的Te沉淀相的拉曼峰位于 12 5和 145cm-1处 ,此峰与标准的Te三角晶系的拉曼峰相比 ,往高能方向移动了 2cm-1,这表明Te沉淀相受到了压应力的作用。MCT中位于 10 8cm-1处微弱的拉曼峰来源于Hg空位 ,此峰只在p型和包含有反型层的MCT中出现 ,在n型的MCT中几乎不出现。MCT的拉曼二极散射峰对其表面完整性非常敏感 ,表面完整性好的拉曼峰很明显 ,而表面完整性较差的峰则不太明显 ,此峰的 2LO (T)模的强度测量对晶体制备过程中的表面分析也可提供有用的信息。
This paper analyzes the Raman scattering peaks of Hg vacancies and Te precipitates in HgCdTe or MCT as well as the relationship between the surface integrity of HgCdTe and its secondary Raman scattering peak. The Raman peaks of the Te-precipitated phase in the MCT are located at 125 and 145 cm-1, which is shifted by 2 cm-1 from the Raman peak of the standard Te trigonal system in the direction of higher energy, indicating that the Te precipitation phase is affected The role of compressive stress. The weak Raman peak at 108 cm-1 in MCT originates from the Hg vacancy. This peak appears only in the p-type and MCT containing the inversion layer, and hardly appears in the n-type MCT. The Raman peak of MCT is very sensitive to its surface integrity. The Raman peak with good surface integrity is obvious while the peak with poor surface integrity is not obvious. The intensity of 2LO (T) mode of this peak Measuring surface analysis during the preparation of crystals can also provide useful information.