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提出了一种基于保角映射方法的14nm鳍式场效应晶体管(FinFET)器件栅围寄生电容建模的方法。对FinFET器件按三维几何结构划分寄生电容的种类,再借助坐标变换推导出等效电容计算模型,准确表征了不同鳍宽、鳍高、栅高和层间介质材料等因素对寄生电容的依赖关系。为了验证该寄生电容模型的准确性,对不同结构参数的寄生电容进行三维TCAD仿真。结果表明,模型计算结果与仿真结果的拟合度好,准确地反映了器件结构与寄生电容之间的依赖关系。
A method of modeling the gate-to-gate parasitic capacitance of a 14nm FinFET device based on conformal mapping is proposed. FinFET devices are classified into three dimensions according to the three-dimensional geometric structure of parasitic capacitance, and then the equivalent capacitance calculation model is derived by coordinate transformation. The dependence of parasitic capacitances on different fin widths, fin height, gate height and interlayer dielectric materials is accurately characterized . In order to verify the accuracy of the parasitic capacitance model, three-dimensional TCAD simulation of parasitic capacitance of different structural parameters was performed. The results show that the fitting degree between the model calculation and the simulation results is good, which accurately reflects the dependence of device structure and parasitic capacitance.