,Terahertz detector for imaging in 180-nm standard CMOS process

• 作 者: Zhaoyang LIU Liyuan LIU Zhao ZHANG Jian LIU Nanjian WU
• 机 构: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,Chinese Acade
• 出 处: Science China(Information Sciences)
• 发表日期: 2017年08期
• 关键词: terahertz detector terahertz imaging CMOS patch antenna matching network

A CMOS terahertz(THz) detector implemented in a 180-nm standard CMOS process is proposed,and room-temperature detection of 0.94-THz radiation is demonstrated. The detector consists of an integrated on-chip patch antenna and a source-feeding NMOS transistor as the rectifying element. To improve the power transfer efficiency between the patch antenna and NMOS transistor, a novel short-stub matching network is proposed. An open quarter-wavelength microstrip transmission line connecting gate is proposed to eliminate the influence of the bonding wire and pad on the antenna-transistor impedance matching. Illuminated by a 0.94-THz BWO source, the measured voltage responsivity(Rv) and noise equivalent power(NEP) of the detector are 31 V/W and 1.1 n W/Hz1/2, respectively.

A CMOS terahertz (THz) detector implemented in a 180-nm standard CMOS process is proposed, and room-temperature detection of 0.94-THz radiation is demonstrated. The detector consists of an integrated on-chip patch antenna and a source-feeding NMOS transistor as the rectifying element. To improve the power transfer efficiency between the patch antenna and NMOS transistor, a novel short-stub matching network is proposed. An open quarter-wavelength microstrip transmission line connecting gate is proposed to eliminate the influence of the bonding wire and pad on the antenna-transistor impedance matching. Illuminated by a 0.94-THz BWO source, the measured voltage responsivity (Rv) and noise equivalent power (NEP) of the detector are 31 V / W and 1.1 nW / Hz1 / 2, .