Light emitting devices based on Si nanoclusters:the integration with a photonic crystal and electrol

• 作 者: Alessia Irrera Fabio Iacona Giorgia Franzò Andrea Canino Delfo Sanfilippo Gianfranco Di Stefano Angelo Piana Pier Giorgio Fallica Francesco Priolo
• 机 构: MATIS CNR-INFM and Dipartimento di Fisica e Astronomia Università di Catania via Santa Sofia 64 951
• 出 处: Optoelectronics Letters
• 发表日期: 2007年05期
• 关键词: photonic amorphous lithography constitute monolithic have SiOx fabrication emitt

We present the properties and potentialities of light emitting devices based on amorphous Si nanoclusters. Amorphousnanostructures may constitute an interesting alternative to Si nanocrystals for the monolithic integration of optical andelectrical functions in Si technology. In fact, they exhibit an intense room temperature electroluminescence (EL). The ELproperties of these devices have been studied as a function of current and of temperature. Moreover, to improve theextraction efficiency of the light, we have integrated the emitting system with a 2D photonic crystal structure opportunelyfabricated by using conventional optical lithography to reduce the total internal reflection of the emitted light. The extractionefficiency in such devices increases by a factor of 4 at a resonance wavelength.

We present the properties and potentialities of light emitting devices based on amorphous Si nanoclusters. Amorphous nanostructures may constitute an interesting alternative to Si nanocrystals for the monolithic integration of optical andelectrical functions in Si technology. In fact, they exhibit an intense room temperature electroluminescence (EL) . The ELproperties of these devices have been studied as a function of current and of temperature. Moreover, to improve the extraction efficiency of the light, we have integrated the emitting system with a 2D photonic crystal structure. internal reflection of the emitted light. The extraction efficiency in such devices increases by a factor of 4 at a resonance wavelength.