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背面接触太阳电池越来越多地被人们关注,这种电池增加了使用激光器在硅片上打孔工艺。选用了半导体激光器作为光源在晶体硅片上进行打孔实验。通过调节激光器的功率、离焦量、脉冲重复频率等参数并分析其对打孔的影响。在激光打孔后,对硅片使用显微镜测试来分析打孔大小、形貌和损伤区,并优化打孔的参数。通过实验证实孔的入孔直径和出孔直径都随激光能量的增大而增大。随着离焦量的增大,出孔直径先增大后减小,且出孔直径越大时孔附近的破坏区域越小。脉冲重复频率的变化由于影响激光能量而影响孔径。另外,脉冲重复频率过大时,激光能量仍然比较大,但却打不穿硅片。
The back of the contact solar cells is more and more attention, this battery adds a laser drilling process on the silicon. Selected semiconductor laser as a light source in the crystal silicon drilling experiments. By adjusting the laser power, defocus amount, pulse repetition frequency and other parameters and analyze its impact on the punch. After laser drilling, microscope tests were performed on the wafers to analyze punch size, topography, and damage area, and to optimize punch parameters. Experiments show that the hole diameter and hole diameter with the laser energy increases. As the amount of defocus increases, the diameter of the exit hole first increases and then decreases, and the larger the exit hole diameter is, the smaller the damage area is near the hole. Changes in pulse repetition frequency affect aperture due to laser energy. In addition, the pulse repetition frequency is too large, the laser energy is still relatively large, but can not wear silicon.