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一般制备锑化铟材料的方法是将铟、锑原材料按化学比在石英管中通以氢气,加高温熔融合成多晶,再将这种多晶锑化铟锭在氢气氛下进行区域提纯,经提纯后的锭条取电参数合格部分,通过切、磨、腐蚀放入单晶炉内拉制成单晶。这种工艺周期长、多晶锭多次暴露于大气中并与其它物质接触,易于污染。由于目前原材料的纯度有显著提高,因此我们用铟、锑直接进行反应拉制锑化铟单晶。文献〔1〕亦有这种设想。
The general method for preparing indium antimonide materials is that the indium and antimony raw materials are chemically hydrogenated in a quartz tube at a chemical ratio and fused at high temperature to synthesize polycrystalline. The polycrystalline indium antimonide ingot is then subjected to regional purification in a hydrogen atmosphere, After purification of the ingot to take part of the electrical parameters, through the cut, grinding, corrosion into the single crystal furnace pulled into single crystal. This process cycle is long, polycrystalline ingots repeatedly exposed to the atmosphere and contact with other substances, easy to pollute. As the purity of raw materials has significantly increased, so we use indium, antimony direct reaction of indium antimonide single crystal. Document [1] also have this idea.