,Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode

• 作 者: LIU Bo FENG Gao-Ming WU Liang-Cai SONG Zhi-Tang LIU Qi-Bin FENG Song-Lin CHEN Bomy
• 机 构: Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese
• 出 处: 中国物理快报（英文版）
• 发表日期: 2007年1期

In order to reduce the reset current of chalcogenide random access memory, a W sub-microtube heater electrode with outer/inner diameter of 260/100nm, which was fabricated with standard 0.18-μm technology, is proposed for the first time to achieve a reset current of about 0.5mA. The reasons may be that sub-microtube increases the number of electrode edge and thermal efficiency is improved greatly because the thermal density on the edge of sub-microtube electrode is generally the highest.