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利用PHI-550型多功能电子谱仪研究了Cu-Be合金活化后的CuBe(O)样品。结果表明:(1)Cu-Be合金活化后,表面生成较为纯净的BeO层。氧化使得ESCA Be 1 S峰由111.6eV(电子结合能)移至113.6eV,使得Be KLL Auger峰由104eV(电子动能)移至约93eV;(2)Cu、Be组分在活化过程中均通过初始界面向外迁移,但二者机制有别;(3)BeO膜在电子束轰击下有解离发生。此外,利用不同能量电子的逃逸深度差,测算出800℃活化样品的BeO膜厚度约为24(?)。
The activated CuBe (O) samples of Cu-Be alloy were studied by PHI-550 multifunctional electronic spectrometer. The results show that: (1) After the activation of Cu-Be alloy, a relatively pure BeO layer is formed on the surface. Oxidation shifted the ESCA Be 1 S peak from 111.6 eV (electron binding energy) to 113.6 eV, which shifted the Be KLL Auger peak from 104 eV (electron kinetic energy) to about 93 eV; (2) both the Cu and Be components passed during activation The initial interface moves outward, but the two mechanisms are different. (3) The BeO film dissociates under electron beam bombardment. In addition, using the difference of escape depth of different energy electrons, the BeO film thickness of the activated sample at 800 ℃ is estimated to be about 24 (?).