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本文介绍了由低能离子束沉积形成薄膜的方法,并讨论了这种方法的特点。简单介绍了低能离子束装置,详细讨论了由此装置产生的低能银离子束在单晶硅衬底上沉积的Ag/Si薄膜特性,以及离子束能量对硅衬底表面状态和薄膜结晶特性的影响。沉积的薄膜结晶特性由X射线衍射、背散射沟道技术和反射电子衍射进行了分析;并用俄歇电子能谱,背散射沟道技术和反射电子衍射分析了低能离子束轰击后的硅衬底表面状态。
This article describes the method of forming a thin film by low-energy ion beam deposition and discusses the characteristics of this method. The low-energy ion beam device is briefly introduced. The characteristics of the Ag / Si thin film deposited on the single-crystal silicon substrate by the low-energy silver ion beam produced by the device and the influence of the ion beam energy on the surface state of the silicon substrate and the crystallization characteristics of the thin film influences. The deposited films were characterized by X-ray diffraction, backscattering channel and reflection electron diffraction. The Si substrate after bombardment with low-energy ion beam was analyzed by Auger electron spectroscopy, backscattering channel and reflection electron diffraction surface condition.