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在高速光电子器件的微波封装过程中,需要综合考虑封装寄生参数和芯片寄生参数对器件高频性能的影响。利用封装寄生参数对芯片寄生参数的补偿作用,成功实现了10 Gb/s电吸收调制激光器(EML)的高频封装。通过封装前后芯片和器件的小信号频率响应测试结果对比,器件的反射参数和传输参数有所改善,3 dB带宽达到10 GHz;并进行了10 Gb/s速率的光纤传输实验,经过40 km光纤传输后通道代价不到1 dBm(误码率为10-12),满足10 Gb/s长距离光纤传输系统的要求。
In the high-speed optoelectronic devices in the microwave packaging process, the need to consider the package parasitic parameters and chip parasitic parameters of the device high-frequency performance. The high-frequency packaging of the 10 Gb / s electro-absorption modulation laser (EML) has been successfully achieved by compensating for parasitic chip parasitics. By comparing the small-signal frequency response of the chip and the device before and after the package, the reflection and transmission parameters of the device are improved, and the 3 dB bandwidth reaches 10 GHz. The fiber transmission experiment at 10 Gb / s is carried out. After 40 km fiber After transmission channel costs less than 1 dBm (bit error rate of 10-12), to meet the 10 Gb / s long-distance optical transmission system requirements.