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运用有限元软件COMSOL Multiphysics 4.3a对多晶硅定向凝固过程进行了全局瞬态模拟,在多晶硅铸锭炉顶部加热器与侧部加热器的垂直距离分别为60、150、300 mm时,分析了其对多晶硅熔化以及结晶初期的影响。结果表明:距离为60 mm时硅料熔化所需时间最长,而距离为150、300 mm时硅料熔化时间与其相比分别少34、60 min;对于结晶初期的固液界面,距离为60 mm时固液界面接近于平面,有利于多晶硅晶体生长,而距离为150、300 mm时固液界面均呈现明显的凸形,并且后者比前者凸起的程度更大,会降低多晶硅锭的质量。
The global transient simulation of the directional solidification of polycrystalline silicon was carried out with finite element software COMSOL Multiphysics 4.3a. When the vertical distance between the top heater and side heater of polycrystalline silicon ingot furnace were 60, 150 and 300 mm respectively, Polysilicon melting and crystallization of the initial impact. The results show that when the distance is 60 mm, the melting time of the silicon material is the longest, while the melting time of the silicon material is 34 and 60 min less than the distance of 150 and 300 mm respectively. For the solid-liquid interface at the initial stage of crystallization, the distance is 60 mm solid-liquid interface is close to the plane, is conducive to the growth of polycrystalline silicon, and the distance of 150,300 mm when the solid-liquid interface showed obvious convex, and the latter than the former raised a greater extent, will reduce polycrystalline silicon ingot quality.