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介绍了一种测定亚微米发射极条晶体管的物理参数和几何参数的简便分析方法。该分析方法是为 CG41微波低噪声晶体管的研制而研究的。根据 Gummel 方程得出了用常数和可测量表示的基区平均掺杂浓度(?)_B的表达式。使用简化的 f_T 表达式,通过测量,f_T 与 I_E 的关系确定出基区宽度W_B 以及发射极正向电容 C_E。通过(?)_B、W_B 以及 C_E 的测定,可确定出晶体管的本征基区薄层电阻 R_口_(in)、发射极面积 A_E 和发射极条宽 d_E。应用上述参量的实测值,计算了晶体管的噪声系数 NFc,其结果与实测的噪声系数 NF_m 很一致。
A simple method for analyzing the physical and geometrical parameters of a sub-micron emitter transistor is presented. The analysis method is for the development of CG41 microwave low noise transistor. According to the Gummel equation, we get the expression of constant average and measurable base average doping concentration (?) _B. Using a simplified f_T expression, the base width W_B and the emitter forward capacitance C_E are determined by measuring the relationship of f_T to I_E. Through the determination of (?) _B, W_B and C_E, the intrinsic base resistance of the transistor, R_ (in), emitter area A_E and emitter width d_E can be determined. Using the measured values of the above parameters, the noise figure NFc of the transistor is calculated and the result is in good agreement with the measured noise figure NF_m.