论文部分内容阅读
本文对以SF_6+A_r为反应气体的反应离子刻蚀(RIE)多晶硅工艺进行了研究。研究表明,SF_6+ArRIE多晶硅具有良好的各向异性、选择性以及较高的刻蚀速度,得到了0.40μm的多晶硅条,并且成功地应用于0.5～1.0μm CMOS集成电路的制作中。
In this paper, reactive ion etching (RIE) polycrystalline silicon technology with SF_6 + A_r as reactive gas was studied. The results show that the SF_6 + ArRIE polysilicon has good anisotropy, selectivity and high etching rate. The polysilicon strip of 0.40μm has been obtained and successfully used in the fabrication of 0.5 ~ 1.0μm CMOS integrated circuits.