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从理论和实验上系统地讨论了压阻输出微传感器的噪声 .选用了单晶硅、非晶硅、多晶硅和微晶硅四种材料作为压阻材料 ,设计了 16种不同尺寸的力敏 Wheastone电桥 ,并对器件分别进行了两种不同浓度的掺杂和两种不同条件的退火 ,共获得 2 5 6种压阻输出的微传感器 .测量所有器件的噪声 ,并对噪声谱进行理论分析 ,实验结果表明单晶硅具有最低的 1/ f 噪声和 Hooge因子 (α)的值 ,而非晶硅略好于微晶硅和多晶硅 .几何尺寸大的力敏电阻具有低的 1/ f 噪声 ,但 α值不受器件尺寸的影响 .掺杂浓度增加 10倍时 ,不同器件的 1/ f 噪声降低介于35 %— 5 0 %之间 .相比 95 0℃、10 m in退火条件 ,10 5 0℃、30 m in的高温长时间退火的器件 ,其 1/ f 噪声降低约 6 5 % .
The noise of the piezoresistive output micro-sensor is systematically discussed theoretically and experimentally, and four kinds of materials of monocrystalline silicon, amorphous silicon, polycrystalline silicon and microcrystalline silicon are selected as the piezoresistive material, 16 kinds of force-sensitive Wheastone Bridge, and the device were two different concentrations of doping and annealing of two different conditions, a total of 256 kinds of piezoresistive sensor output obtained.Measure the noise of all devices, and theoretical analysis of the noise spectrum , Experimental results show that single crystal silicon has the lowest values of 1 / f noise and Hooge factor (α), whereas amorphous silicon is slightly better than microcrystalline silicon and polycrystalline silicon. The geometry-sized varistor has low 1 / f noise , But the value of α is not influenced by the size of the device.When the doping concentration is increased by 10 times, the 1 / f noise reduction of different devices is between 35% and 50% .Compared with 95 0 ℃ and 10 mins annealing conditions, The 10/0 ℃, 30 m in high temperature and long time annealing of the device, the 1 / f noise reduction of about 65%.