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本文简单介绍了８００Ｖ／１０Ａ和１２００Ｖ／Ａ绝缘栅双极晶体管（ＩＧＢＴ）的研制．重点介绍工艺过程和测试结果．
This article briefly introduces the development of 800V / 10A and 1200V / A insulated gate bipolar transistors (IGBTs). Focus on the process and test results.