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美国和韩国的研究者们研发了一种在氢气下的高压退火工艺,应用于铟镓砷量子阱上的Al2O3/HfO2栅堆叠。该项研究的目的在于减少界面和边界处的陷阱,减轻它们对晶体管性能和阈值电压可靠性的负面影响。该项实验在平面金属氧化物半导体电容和场效应晶体管上进行,研究者们表示:“我们相信最新推出的高压退火技术对于非平面InGaAs MOSFET,如三栅极结构,是有重大意义的,通过退火这一操作步骤,可以帮助修复侧壁栅堆叠
Researchers in the United States and South Korea have developed a high-pressure annealing process under hydrogen for the Al 2 O 3 / HfO 2 gate stack on an indium gallium arsenide quantum well. The goal of this study is to reduce the pitfalls at interfaces and boundaries and to mitigate their negative effects on transistor performance and threshold voltage reliability. The experiment was conducted on planar MOS capacitors and field-effect transistors, the researchers said: ”We believe the new high-pressure anneal technology is of great importance to non-planar InGaAs MOSFETs such as the tri-gate structure, By annealing this procedure, it can help to repair the sidewall grid stack