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HgCdTe薄膜中的Void缺陷严重影响面阵器件的有效元数。对用分子束外延法在GaAs衬底上生长的HgCdTe薄膜中的Void缺陷进行了形貌、剖面观测和能谱分析。衬底表面状况和HgCdTe生长过程中的Hg/Te束流比及衬底温度决定了Void缺陷的密度和尺寸。在比较优化的条件下，可将Void缺陷密度降到5×102cm－2以下。
Void defects in HgCdTe films seriously affect the effective number of elements in the area array device. Morphology, cross section observation and energy spectrum analysis of Void defects in HgCdTe films grown by molecular beam epitaxy on GaAs substrates were carried out. The surface condition of the substrate and the Hg / Te beam ratio and the substrate temperature during HgCdTe growth determine the density and size of the Void defects. Under more optimized conditions, the Void defect density can be reduced below 5 × 102cm-2.