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一、前言 GaAs MESFET行波管替代器是一种高增益功率放大器,通常增益大于40分贝。它是用GaAs MESFET做有源器件。GaAs MESFET微波功率放大器比行波管放大器、体效应二极管放大器等具有工作频带宽、噪声系数小、增益高、动态范围大、效率高、线性好、功耗小、使用寿命长和可靠性高等优点。为了提高卫星地面站设备的可靠性,降低设备维护费用,我们着手研制6GHz CaAs MESFET功率放大器,代替原设备上行线中的行波管放大器及其前级预放。这是一种高增益、线性功率放大器。向国外购买这种功率放大器,价格昂贵,要消耗国家大量外汇。
I. Introduction The GaAs MESFET TWT is a high-gain power amplifier with a gain of typically more than 40 dB. It is made of GaAs MESFET active devices. GaAs MESFET Microwave Power Amplifier has the advantages of wide working frequency band, small noise figure, high gain, large dynamic range, high efficiency, good linearity, low power consumption, long service life and high reliability compared with that of a traveling wave tube amplifier and a body effect diode amplifier . In order to improve the reliability of satellite ground station equipment and reduce equipment maintenance costs, we started to develop a 6GHz CaAs MESFET power amplifier to replace the TWT amplifier and its pre-amplifier in the upstream of the original equipment. This is a high gain, linear power amplifier. To buy such a power amplifier abroad, expensive, to consume a large number of foreign exchange.