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功率模块的封装受日益增加的需求所驱动,它要求提高功率密度,改进可靠性和进一步降低成本。已知传统软钎焊连接和键合丝的可靠性限制了有效功率密度的增加,功率密度的增加使得较高结温和将来宽带隙器件的利用成为可能。银烧结今天已经开始取代从芯片到DBC基板的软焊连接,留下了一个主要的可靠性瓶颈:芯片顶部接触面的键合丝。消除了功率模块的键合丝在工业界和学术界已经讨论了好几年。大多数新的封装方法是基于软钎焊连接和嵌入式互联技术。本论文提供的新型封装技术(SKiN技术)详细叙述银烧结连接正在扩大应用到所有的剩余的现代功率模块的互连中去。除了功率芯片双面烧结外,整个DBC板烧结到散热器上。与传统的封装技术相比,最终器件具有很高的功率密度并显示出了卓越的热、电和可靠性性能。
Power module packaging is driven by increasing demand, which calls for increased power density, improved reliability and further reduced costs. It is known that the reliability of conventional soldered connections and bond wires limits the increase in effective power density which makes possible the use of higher junction temperature and future wide bandgap devices. Silver smelting has begun today to replace soldered connections from the chip to the DBC substrate, leaving a major reliability bottleneck: bond wires at the chip’s top contact surface. Bonding wires that eliminate the power module have been discussed for several years in industry and academia. Most new packaging methods are based on soldered connections and embedded interconnect technologies. The new package technology (SKiN technology) provided in this paper details the silver-plated connections that are being expanded to interconnect all the remaining modern power modules. In addition to double-sided power chip sintering, the entire DBC board sintered to the radiator. The final device delivers high power density and exhibits superior thermal, electrical and reliability performance over traditional packaging technologies.