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研究了Ｃｏ３Ｏ４在ＺｎＯ压敏陶瓷中的作用，以及它对电性能和微观结构的影响。Ｘ光衍射（ＸＲＤ）、扫描电镜（ＳＥＭ）和电子探针（ＥＰＭＡ）分析结果表明，在ＺｎＯ压敏陶瓷中Ｃｏ离子以Ｃｏ２＋的形式存在，多数Ｃｏ离子已溶入ＺｎＯ晶粒中，形成替位或填隙缺陷，但它基本上不影响ＺｎＯ晶粒的生长。电性能测试结果表明，适当的氧化钻含量能提高ＺｎＯ压敏陶瓷的非线性系数和通流能力，并能降低漏电流和限制电压，然而过多的氧化钻则会对回升区大电流特性带来损害．此论点至今在国内外尚未见到类似的报道。
The effect of Co3O4 in ZnO varistor ceramics and its effect on the electrical properties and microstructure were investigated. X-ray diffraction (XRD), scanning electron microscopy (SEM) and electron probe (EPMA) analysis showed that Co ions exist in the form of Co2 + in ZnO varistor ceramics, and most of the Co ions have been dissolved in ZnO grains to form Bit or interstitial defects, but it does not substantially affect the growth of ZnO grains. The electrical performance test results show that the proper content of oxidized diamond can improve the nonlinear coefficient and flow-through ability of ZnO varistor ceramics, and can reduce the leakage current and the limiting voltage. However, excessive oxidized diamond will affect the large current characteristic zone To damage. So far this argument has not seen a similar report at home and abroad.