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研究了衬底温度对MOCVD技术制备的ZnO薄膜的微观结构和光电特性影响.XRD和SEM的研究结果表明,衬底温度对ZnO薄膜的微观结构有显著影响,明显的形貌转变温度大约发生在175℃,低于175℃,薄膜呈镜面结构,晶粒为球状,高于177℃的较高温度范围,薄膜从“类金字塔”状的绒面结构演化为“岩石”状显微组织;随着温度增加,薄膜的晶粒尺寸明显增大.绒面结构的未掺杂ZnO薄膜具有17.96cm2/V.s的高迁移率和3.28×10-2Ω.cm的低电阻率,对ZnO薄膜的进一步掺杂和结构优化有望应用于Si薄膜太阳电池的前电极.
The effects of substrate temperature on the microstructure and photoelectric properties of ZnO thin films prepared by MOCVD were studied.The results of XRD and SEM show that the substrate temperature has a significant effect on the microstructure of ZnO thin films, 175 ℃, less than 175 ℃, the film is a mirror-like structure, the grains are spherical, higher than the high temperature range of 177 ℃, the film from the “pyramid-like” suede structure evolved to “rocky” microstructure; With the increase of temperature, the grain size of the film is obviously increased.The textured undoped ZnO film has the high mobility of 17.96cm2 / Vs and the low resistivity of 3.28 × 10-2Ω.cm, Hybrid and structural optimization is expected to be applied to the front electrode of Si thin-film solar cells.