Effect of substrate temperature on microstructural and optical properties of ZnO films grown by puls

• 作 者: HE Jianting ZHUANG Huizhao XUE Chengshan WANG Shuyun HU Lijun XUE Shoubin
• 机 构: Institute of Semiconductor, Shandong Normal University, Jinan 250014, China
• 出 处: 稀有金属（英文版）
• 发表日期: 2006年2期
• 关键词: semiconductor materials ZnO thin film PLD hexagonal wurtzite structure

ZnO thin films were deposited on n-Si (111) at various substrate temperatures by pulsed laser deposition (PLD).X-ray diffraction (XRD), photoluminescence (PL), Fourier transform infrared spectrophotometer (FTIR), and scanning electron microscopy (SEM) were used to analyze the structure, morphology, and optical property of the ZnO thin films. An optimal crystallized ZnO thin film was obtained at the substrate temperature of 600℃. A blue shift was found in PL spectra due to size confinement effect as the grain sizes decreased. The surfaces of the ZnO thin films were more planar and compact as the substrate temperature increased.