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一、概述电容器陶瓷材料的烧成温度最佳为1300℃,但是陶瓷基片被银后的焙烧温度由于受到了银的挥发温度的限制因而应低于900℃。过去生产中为了防止银层的挥发,焙烧温度一般控制在800℃左右。然而实际工作中我们却发现,如果能将焙烧温度尽量接近900℃,则能较大地提高基片的质量,制成的电容器其损耗和绝缘性能也较好。但是由于目前所用常规仪表的控温精度较差,一般在±10℃左右,因而满足不了上述要求。为此我们通过调研,提出并研制了隧道窑多点温度微机控制系统。该系统的工作过程简述如下:由热电偶LB—3输出的0—16.688mv信号,送入低温漂斩波自稳零放大器ICL7650,其输出经
First, an overview of the best sintering temperature of ceramic capacitor material is 1300 ℃, but the ceramic substrate is silver after the baking temperature due to the temperature of the silver is limited and therefore should be less than 900 ℃. In the past production in order to prevent the volatilization of the silver layer, the firing temperature is generally controlled at about 800 ℃. However, in practice, we found that if the calcination temperature can be as close to 900 ° C as possible, the quality of the substrate can be greatly improved, and the capacitor made thereof has better loss and insulation properties. However, due to the poor accuracy of temperature control of the conventional instruments currently used, it generally can not meet the above requirements at about ± 10 ° C. To this end we through research, proposed and developed a multi-point temperature tunnel kiln microcomputer control system. The working process of the system is briefly described as follows: The 0-16.688mv signal output by the thermocouple LB-3 is fed into a low-temperature drift chopper self-ballasted amplifier ICL7650, the output of which