Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGa

• 作 者: 李志聪 李盼盼 王兵 李鸿渐 梁萌 姚然 李璟 邓元明 伊晓燕 王国宏 李晋闽
• 机 构: Semiconductor Lighting R & D Center,Institute of Semiconductors,Chinese Academy of Sciences,Yangzhou
• 出 处: 半导体学报
• 发表日期: 2011年11期
• 关键词: AlGaN stack electrostatic insert insertion inserted dislocation nucleation illum

Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes(LEDs),the strain in the epilayer was increased,the dislocation density was reduced.GaN-based LEDs with different Al compositions were compared.6.8%Al composition in the stacks showed the highest electrostatic discharge(ESD) endurance ability at the human body mode up to 6000 V and the pass yield exceeded 95%.

Through insertion of an AlGaN / GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes (LEDs), the strain in the epilayer was increased, the dislocation density was reduced. compositions were more.6.8% Al composition in the stacks showed the highest electrostatic discharge (ESD) endurance ability at the human body mode up to 6000 V and the pass yield exceeded 95%.