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利用射频磁控溅射技术在Si(111)衬底上制备Ga2O3/BN薄膜,然后在氨气中退火合成了大量的一维GaN纳米线.X射线衍射、选区电子衍射和傅立叶红外吸收光谱的分析结果表明,制备的GaN纳米线为六方纤锌矿结构.利用扫描电子显微镜和高分辨透射电子显微镜观察发现,纳米线具有十分光滑且干净的表面,其直径为40~160nm左右,典型的纳米线长达几十微米.室温下以300nm波长的光激发样品表面,显示出较强的363nm的紫外光发射和422nm处的紫光发射.另外,简单讨论了GaN纳米线的生长机制.
Ga 2 O 3 / BN films were prepared on Si (111) substrate by RF magnetron sputtering and then annealed in ammonia to synthesize a large number of one-dimensional GaN nanowires. X-ray diffraction, selected area electron diffraction and Fourier transform infrared spectroscopy The results show that the prepared GaN nanowires have a hexagonal wurtzite structure and the nanowires have a very smooth and clean surface by scanning electron microscopy and high-resolution transmission electron microscopy. The nanowires have a diameter of about 40-160 nm. The typical nanowires The length of the wire is tens of micrometers.The sample surface is excited by the light of 300nm wavelength at room temperature, which shows a strong 363nm UV emission and a violet emission at 422nm.In addition, the growth mechanism of GaN nanowires is briefly discussed.