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MOS器件的自加热效应将影响器件的性能 .漏极电流将减小 ,长时间的可靠性也会受到影响 .在SOI器件中 ,自加热甚至比埋葬式氧化物引起的问题更严重 .本文通过在SOI和基片之间增加一条具有高导热和低导电的路径 ,减小了自加热的负面效应
MOS devices self-heating effect will affect the performance of the device.Drain current will be reduced, the reliability of long-term will also be affected.In SOI devices, self-heating even burial than the problems caused by oxide more.This paper through Adding a path between SOI and the substrate with high thermal conductivity and low conductivity reduces the negative effects of self-heating