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硅材料在微电子学领域获得了巨大的成功。近年来,将这种成功拓展到光电子学领域已成为众多研究人员追求的目标。基于硅材料及其工艺技术的光电子器件的研究日益增多。在硅光波导开关及其阵列方面,已报道了许多利用自由载流子等离子体色散效应来实现光路交换的研究。这类器件利用pn结向波导局部注入载流子,通过降低这一区域的折射率来实现光路交换。由于需要高密度的注入,在pn结附近的电功耗很高,往往会引起器件局部温升。Nazarova的研究表明,与温升相关的热光效应会引起硅材料折射率的增加。因此,这种伴生的热光效应极可能抵消自由载流子等离子体色散效应,从而改变器件的正常工作特性。我们在非对称全内反射型2×2硅光开关中,首次观察到了这种因热光效应超过自由载流子效应而引起
Silicon materials have enjoyed great success in microelectronics. In recent years, this success has been extended to the field of optoelectronics has become the goal pursued by many researchers. Research on optoelectronic devices based on silicon materials and their processing technologies is increasing. In the field of silicon optical waveguide switches and their arrays, many studies have been reported for optical path switching using the free-carrier plasma dispersion effect. Such devices utilize pn junctions to locally inject carriers into the waveguide and achieve optical path switching by reducing the refractive index in this region. Due to the high density of implants required, high electrical power dissipation near the pn junction often causes local temperature rise of the device. Nazarova’s research shows that the thermo-optic effects associated with temperature rise cause an increase in the refractive index of silicon materials. Therefore, this associated thermo-optic effect is likely to counteract the free-carrier plasma dispersion effect, thereby changing the normal operating characteristics of the device. We first observed in the asymmetric total internal reflection type 2 × 2 silicon optical switch caused by the thermo-optic effect exceeding the free-carrier effect