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利用人工模拟单孔试样，测量了钛在溴化物介质中孔蚀发展速度，并在位测量了孔蚀发展过程中孔内介质的变化．实验表明，在蚀孔发展过程中，蚀孔表面形成盐膜屏蔽层，蚀孔发展速度受盐膜溶解控制．随蚀孔发展，孔内活性阴离子浓度提高了十几倍，Ｈ＋浓度提高了４．５个数量级．利用法拉第定律和传输方程，推导了盐膜溶解控制条件下的蚀孔发展速度方程．
Using artificial simulated single-hole sample, the growth rate of titanium in the bromide medium was measured, and the change of medium in the pores during the development of pitting was measured in situ. Experiments show that during the development of the etching hole, a salt film shielding layer is formed on the surface of the etching hole, and the growth speed of the etching hole is controlled by the salt film dissolution. With the development of pits, the active anion concentration in the pores increased more than tenfold and the H + concentration increased by 4.5 orders of magnitude. Using the Faraday’s law and the transfer equation, the equation of the growth rate of the etch hole under salt film dissolution control was derived.