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本文介绍了一种结构简单、性能优良的硅微波宽带放大单片集成电路,对电路的指标进行了比较全面的分析计算,给出了计算机辅助分析方法。“浅结薄基区”扩散工艺使该电路的制造得以实现,获得了1分贝带宽为1～500MHz、1～1000MHz、1～1500MHz等多种宽带放大电路,增益分别为18dB、10dB和8.5dB,噪声系数分别为3.8dB、6.8dB和7dB,1分贝压缩点输出功率为15～19dBm,电压驻波比为2～2.5。上述品种已有部分正式定型,在国民经济和国防建设中开始发挥了经济效益。
This paper introduces a simple structure, excellent performance silicon microwave broadband amplification monolithic integrated circuit, the circuit of a more comprehensive analysis and calculation of indicators, given the computer-aided analysis. The fabrication of this circuit is realized by the diffusion process of “shallow junction and thin base”. The wideband amplification circuits with 1dB bandwidth of 1 ~ 500MHz, 1 ~ 1000MHz, 1 ~ 1500MHz and gain of 18dB, 10dB and 8.5dB , The noise figure is respectively 3.8dB, 6.8dB and 7dB, 1dB compression point output power is 15 ~ 19dBm, voltage standing wave ratio is 2 ~ 2.5. The above varieties have already been formally formalized and have begun to exert economic benefits in the national economy and national defense construction.