论文部分内容阅读
InAs/GaSbⅡ类超晶格是目前国际上公认的制备第三代高性能红外探测器的理想材料之一,具有能带结构可调、波长响应范围宽、量子效率高、利于实现大面积焦平面阵列等独特优势。为了充分利用这一材料的优点,对材料进行优化设计,采用Kronig-Penney模型对材料的能带结构进行了理论计算;同时,利用输运理论的质量和动量平衡方程对材料的光电导特性进行了计算分析,探讨了这类材料进行非制冷探测的优势。计算结果对深入认识该类材料的光电特性,从而对材料及器件进行优化设计具有重要的指导意义。
InAs / GaSb II superlattice is one of the ideal materials for the preparation of the third generation of high performance infrared detectors internationally. It has the advantages of adjustable band structure, wide wavelength response range, high quantum efficiency and large area focal plane Array and other unique advantages. In order to make full use of the advantages of this material, the material was optimized and the energy band structure of the material was calculated by Kronig-Penney model. Meanwhile, the photoconductivity of the material was calculated by the mass and momentum balance equations of transport theory The computational analysis discussed the advantages of such materials for uncooled detection. The calculation results have important guiding significance for understanding the photoelectric characteristics of such materials in depth and optimizing the materials and devices.