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采用各向异性腐蚀与各向同性腐蚀相结合的技术和特殊的硅 -硅键合技术 ,成功地研制出了一种新型真空微电子压力传感器。测试分析结果表明 ,该传感器反向击穿电压达到 1 0 0 V;在加 3V正向电压时 ,其单个锥尖发射电流为 0 .2 n A;在 2 5～ 1 0 0 g的压力范围内与输出电压呈线性关系 ,灵敏度为 0 .1μA/g
A new type of vacuum microelectronic pressure sensor has been successfully developed using a combination of anisotropic etching and isotropic etching and a special silicon-silicon bonding technique. The results of the test and analysis show that the reverse breakdown voltage of the sensor reaches to 100 V; when the forward voltage is applied to 3 V, the single cone tip emission current is 0.2 nA; in the pressure range of 25 to 100 g Within a linear relationship with the output voltage, the sensitivity of 0 .1μA / g