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1975年6～10月,我们赴878厂进行毕业实践,在厂、车间领导的直接领导和大力支持下,在工人师付和技术人员的具体指导和帮助下,完成了高温存贮热老化的专题试验,取得了一定的成绩。 根据车间P沟道增强型MOS集成电路大批生产的需要,摸索取代电老化的途径,我们进行了“高温存贮热老化”的试验。结果表明:高温存贮热老化具有一定的筛选效果,可望代替电老化。而且,在改善电路性能,提高后部工序成品率,降低成本几方面也都有明显的效果。
From June to October 1975, we went to the 878 factory for graduation practice. Under the direct leadership and strong support from the plant and workshop leaders, with the specific guidance and help of the workers and technicians, we completed the heat aging of high-temperature storage Special experiments have achieved some results. According to the workshop P-channel enhanced MOS integrated circuit mass production needs, explore ways to replace the electrical aging, we conducted a “high-temperature storage heat aging” test. The results show that the thermal aging of high temperature storage has a certain screening effect, which is expected to replace the electric aging. Moreover, the improvement of circuit performance, improve the yield of the latter part of the process, reduce costs, there are several significant effects.