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基于单粒子效应脉冲激光实验装置,开展了90 nm互补金属氧化物半导体静态随机存储器的单粒子翻转和闩锁效应实验,并给出了器件单粒子翻转效应位图.实验发现,器件出现了大量的多位翻转和约20 mA的电源电流脉冲.借助器件仿真工具,揭示了器件发生单粒子多位翻转效应的原因.结果表明,器件局部阵列发生单粒子闩锁效应并传播到多个位单元是诱发多位翻转的主要原因.通过对比分析脉冲激光和器件仿真实验结果,发现P/N阱电势塌陷是导致90 nm互补金属氧化物半导体静态随机存储器出现单粒子闩锁传播效应的内在物理机制.
Based on the single-event pulsed laser experimental setup, a single-particle flip-flop and latch-up experiment of a 90 nm CMOS SRAM is carried out, and a bit map of single-element flip-flop effect is given.It is found that a large number of devices Multi-bit flip-flop and about 20 mA supply current pulse.The device simulation tool revealed the single-chip multi-bit flip effect of the device.The results show that the device local array single-particle latch-up effect and spread to a number of bit cells is The main reason of multi-bit inversion is found.Through comparative analysis of the experimental results of pulsed laser and device simulation, it is found that P / N trap potential collapse is the intrinsic physical mechanism leading to single-particle latch-up propagation in 90 nm CMOS RAM.