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为改善场终止型绝缘栅双极型晶体管(FS-IGBT)电场终止能力的可靠性,对一种缓变场终止型绝缘栅双极型晶体管(GFS-IGBT)的特性进行了仿真研究。与传统FS-IGBT的突变场终止层不同,GFS-IGBT所具有的场终止层是一个厚度为20~30μm,峰值掺杂浓度为3.5×1015cm-3的缓变场终止层。采用Sentaurus TCAD仿真软件,对600 V/20 A的FS-IGBT与GFS-IGBT和非穿通型IGBT(NPT-IGBT)在导通、开关和短路特性等方面进行了对比仿真。结果表明,在给定的参数范围内,GFS-IGBT具有更低的通态压降、良好的关断电压波形以及更小的关断能耗。最后介绍了一种针对600 V IGBT器件的缓变场终止结构的制造技术。
In order to improve the reliability of the field termination of field termination IGBT, the characteristics of a slowly field stop IGBT (Finned Gate Insulated Gate Bipolar Transistor) are simulated. Unlike traditional FS-IGBT terminated field stop layers, the GFS-IGBT has a field stop layer of a slow stop layer with a thickness of 20-30 μm and a peak doping concentration of 3.5 × 10 15 cm -3. Sentaurus TCAD simulation software was used to simulate the conduction, switching and short-circuit characteristics between the 600 V / 20 A FS-IGBT, GFS-IGBT and non-through IGBT (NPT-IGBT). The results show that the GFS-IGBT has a lower on-state voltage drop, a good turn-off voltage waveform, and a smaller turn-off energy consumption over a given parameter range. Finally, a manufacturing technology of slow-change field termination structure for 600 V IGBT devices is introduced.