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本文对采用双极晶体管技术的集成电路存贮器与采用各种绝缘门场效应晶体管(IGFET)存贮器进行了比较。P沟道IGFET存贮单元与双极晶体管存取电路结合,似乎能提供所希望的一些特性。文章考虑了存贮机构、单片设计、封装及互连等问题。在半导体存贮器中,梁式引线密封结工艺比其它封装和互连工艺有更大的优越性。 作者考察了兆位计算机存贮器设计中的某些问题,着重考察了有关功耗,互连、可靠性、维修、造价等问题。最后对基于现有技术的兆位半导体存贮器可能具有的特性与磁芯存贮器,平面薄膜存贮器和磁环线存贮器的特性进行了比较。从这些调查研究中得出结论:半导体存贮器不管在小容量或在大容量存贮器应用中都大有前途。
This article compares the use of bipolar transistor technology integrated circuit memory and the use of a variety of insulated gate field effect transistor (IGFET) memory. The combination of P-channel IGFET memory cells and bipolar transistor access circuitry seems to provide some of the desired characteristics. The article considers the storage organization, monolithic design, packaging and interconnection and other issues. In semiconductor memory, the beam lead seal junction process has more advantages than other package and interconnect processes. The author examines certain issues in the design of megabit computer memories, focusing on issues such as power consumption, interconnection, reliability, repair, and cost. Finally, the possible characteristics of a megabit semiconductor memory based on the prior art are compared with the characteristics of a magnetic core memory, a planar film memory and a magnetic ring memory. From these investigations, it has been concluded that semiconductor memories are promising both in small capacity and in mass storage applications.