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分子束外延（ＭＢＥ），金属有机化学气相淀积（ＭＯ－ＣＶＤ），金属有机分子束外延（ＭＯ－ＭＢＥ）以及原子层和分子层外延（ＡＬＥ和ＭＬＥ）等超薄层外延技术，是随着集成电路向高密度集成，高工作速度和超小型化方向发展而形成的一种薄膜制备工艺，并在微电子学、低维物理和材料科学等领域中有着重要的应用．利用这种技术，可以制备各类超高速器件，光电器件及其集成电路．由这种工艺制备的优质超晶格结构为人们更加深入地从理论和实验上揭示二维电子体系的物理性质带来了极大便利，而且一维超晶格的实现也将有赖于超薄层外延生长技术．可以预期，用这种技术还可以制备由半导体、金属以及有机材料相结合的多类型、多组元的多层人工超薄材料。
Thin-layer epitaxy, such as molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MO-CVD), metal organic molecular beam epitaxy (MO-MBE), and atomic and molecular layer epitaxy (ALE and MLE) The integrated circuit to high-density integration, high speed and ultra-miniature direction of the formation of a thin film preparation process, and in microelectronics, low-dimensional physics and materials science and other fields has an important application. Use of this technology, you can prepare all kinds of ultra-high-speed devices, optoelectronic devices and their integrated circuits. The high-quality superlattice structure prepared by this kind of process provides great convenience for people to theoretically and experimentally disclose the physical properties of two-dimensional electron systems, and the realization of one-dimensional superlattices will also depend on the ultra-thin Layer epitaxial growth technology. It is expected that multi-type, multi-component, multilayered artificial ultra-thin materials composed of semiconductor, metal and organic materials can also be prepared by this technique.