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报道了一款采用0.25μm GaN功率MMIC工艺研制的0.1~2.0 GHz超宽带功率放大器芯片。芯片采用非均匀分布式拓扑结构进行设计。在管芯栅极端设计稳定结构来提高电路的整体稳定性,在漏极端采用阻抗渐变的方式进行电路匹配,从而提高电路的效率。芯片漏压30 V、连续波条件下,在0.1~2.0 GHz频率范围内,线性增益大于18 d B,功率增益大于13 d B;在0.1~1.5 GHz频率范围内饱和输出功率大于10 W,功率附加效率大于55%,最高效率达到78%。芯片面积2.4 mm×1.9 mm。
A 0.1 ~ 2.0 GHz UWB power amplifier chip based on 0.25μm GaN power MMIC process is reported. The chip uses a non-uniform distributed topology design. Designing a stable structure at the gate of the die improves the overall stability of the circuit, and matches the circuit with a gradual change of impedance at the drain end to improve the efficiency of the circuit. Chip leakage voltage 30 V, continuous wave conditions, 0.1 to 2.0 GHz in the frequency range, the linear gain greater than 18 d B, the power gain greater than 13 d B; in the 0.1 ~ 1.5 GHz frequency range of saturated output power greater than 10 W, power Additional efficiency of more than 55%, the maximum efficiency of 78%. Chip area of 2.4 mm × 1.9 mm.