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研究了外加电场对MOS器件电离辐射效应的影响。采用10 keV X射线对MOS器件在正/反电场偏置条件下进行总剂量辐射,分析了MOS器件辐射前后阈值电压的漂移量。实验结果表明,正偏情况下MOS器件的阈值电压漂移量远大于反偏情况下MOS器件的阈值电压漂移量。基于一维连续性方程,在考虑电子-空穴对的复合/逃逸率、电子及空穴的捕获横截面与外加电场关系的基础上,模拟了辐射诱生栅氧化层内陷阱电荷与辐射总剂量之间的关系,分析了陷阱电荷对MOS器件阈值电压的影响,仿真结果与实验数据吻合良好。
The effect of applied electric field on the ionizing radiation effect of MOS devices is studied. The total dose of the MOS device under forward / reverse electric field bias conditions was measured by 10 keV X-ray. The drift of the threshold voltage before and after the MOS device was analyzed. The experimental results show that the threshold voltage shift of MOS device in forward bias is far greater than the threshold voltage shift of MOS in reverse bias. Based on the one-dimensional continuity equation, based on the relationship between the recombination / escape rate of electron-hole pairs, the capture cross-section of electrons and holes and the applied electric field, the effects of trap charge and total radiation The relationship between the dose, the impact of trap charge on the threshold voltage of the MOS device is analyzed, and the simulation results are in good agreement with the experimental data.