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采用VHF-PECVD技术制备了系列不同硅烷浓度和反应气压的微晶硅薄膜.运用拉曼散射光谱和x射线衍射对制备的材料进行了结构分析.在实验研究的范围内,制备材料的晶化程度随硅烷浓度的增加而降低.XRD的测试结果表明制备的微晶硅材料均体现了(220)方向择优.应用在电池的有源层中,制备出了效率达7·1%的单结微晶硅太阳电池,电池的结构是glass/ZnO/p(μc-SiH)/i(μc-SiH)/n(a-SiH/Al),没有ZnO背反射电极,有源层的厚度仅为1·2μm.
A series of microcrystalline silicon films with different silane concentration and reaction pressure were prepared by VHF-PECVD technique.The structure of the prepared materials was analyzed by Raman scattering and X-ray diffraction.The crystallization of the prepared materials XRD results show that the prepared microcrystalline silicon materials all show the preferred direction of (220) .Under the active layer of the cell, a single junction with an efficiency of 7.1% has been prepared The structure of the cell is glass / ZnO / p (μc-SiH) / i (a-SiH / Al) without ZnO back reflector and the thickness of the active layer is only 1 · 2μm.