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以ＣＨ４ 和Ｈ２ 为反应混合气体，用衬底负偏压热灯丝ＣＶＤ法在Ｓｉ（１００）面上制备金刚石膜，使用扫描电子显微镜（ＳＥＭ）、Ｒａｍ ａｎ 谱和Ｘ射线光电子能谱（ＸＰＳ）对在硅尖上的金刚石核化进行了研究，并着重讨论了沉积在硅尖上的金刚石颗粒的生长机理。
A diamond film was prepared on the Si (100) surface by using a substrate negative bias hot filament CVD method with CH4 and H2 as reaction gas mixtures. Scanning electron microscopy (SEM), Ram an spectrum and X-ray photoelectron spectroscopy (XPS) The nucleation of diamond on the silicon tip has been studied and the growth mechanism of diamond particles deposited on the silicon tip has been highlighted.