Acheivement of Nano-Scale SiGe Layer with Discrete Ge Mole Fraction Profile Using Batch-Type HVCVD

• 作 者: Gon-sub Lee Tae-hun Shim Jea-g
• 机 构: Advanced Semiconductor Material and Device Development Center
• 出 处: 稀土学报（英文版）
• 发表日期: 2004年期
• 关键词: strained Si nano scale SiGe layer Ge mole fraction HVCVD gas flow boat-out time

The strained Si grown on the relaxed SiGe-on-insulator C-MOSFETs is a promising device for the future system LSI devices with the design rule of sub-micron. The achievement of the discrete Ge mole fraction in the SiGe layer is a key engineering in low-temperature SiGe epitaxial growth using HVCVD. The pre-flow of GeH4 gas enhanced the Ge mole fraction and SiGe layer thickness. In addition, the Ge mole fraction and SiGe layer thickness increases with the gas ratio of GeH4/SiH4 + GeH4, process temperature, and gas flow time. However, the haze was produced if the Ge mole fraction is above 22wt%. The discrete-like Ge mole fraction with 22 wt% in 10 nm SiGe layer was obtained by the pre-flow of GeH4 for 10 s, the mixture gas ratio of GeH4/SiH4 + GeH4 of 67%, and the gas flow time for 150 s at the process temperature of 550 C.