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提出一种新颖的横向槽栅双极晶体管（ Ｌ Ｔ Ｇ Ｂ Ｔ） 结构．此结构可明显改善器件的闩锁效应．通过数值模拟，比较了 Ｌ Ｔ Ｇ Ｂ Ｔ 结构与 Ｌ Ｉ Ｇ Ｂ Ｔ 结构的闩锁电流密度大小，讨论了 Ｌ Ｔ Ｇ Ｂ Ｔ 结构闩锁电流密度与该结构的ｎ ＋ 和ｐ ＋ 阴极区域设计的关系．在相同５ 微米ｎ ＋ 阴极长度下， Ｌ Ｔ Ｇ Ｂ Ｔ 结构闩锁电流密度比 Ｌ Ｉ Ｇ Ｂ Ｔ 结构提高了７ ．７ 倍， Ｌ Ｔ Ｇ Ｂ Ｔ结构闩锁电流密度大小随槽栅与ｐ ＋ 阴极之间距离减小而增大．
A novel lateral Trench Bipolar Transistor (LTGBT) structure is proposed. This structure can significantly improve the latch-up effect of the device. Through the numerical simulation, the latched current densities of L T G B T structure and L G G T T structure are compared. The latch current density of L T G B T structure and the design of the n + and p + cathode regions of the structure are discussed Relationship. At the same 5 μm n + cathode length, the L T G B T structure latch-up current density is increased by 7 over the L I G B T structure. 7 times, L T G B T structure latch current density increases with the distance between the gate and the p + cathode increases.