,Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in sta

• 作 者: Yanxu Chen Dongliang Xu Kaikai Xu Ning Zhang Siyang Liu Jianming Zhao Qian Luo Lukas W.Snyman Jacobus W.Swart
• 机 构: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Scien
• 出 处: 中国物理B（英文版）
• 发表日期: 2019年10期
• 关键词: silicon light-emitting diode reverse bias electro-optic modulation

Si p+n junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400-900 nm.In this study,to realize the switching speed in the GHz range,we present a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions.We also verify the optoelectronic characteristics by disclosing the related physical mechanisms behind the light emission phenomena.The emission of visible light by a monolithically integrated Si diode under the reverse bias is also discussed.The light is emitted as spatial sources by the defects located at the p-n junction of the reverse-biased diode.The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence.