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测定了一组乙烯基聚合物抗蚀剂和光致抗蚀剂的等离子体和活性离子蚀刻速率,以及离子铣蚀刻速率;并发现在合成中改变乙烯侧基取代基或改变光致抗蚀剂等20多种因素都会影响蚀刻速率。观察到含有重键及不饱和侧基的乙烯基聚合物抗蚀剂,以及负性印刷体系具有低的蚀刻速率及较好的蚀刻适应性。虽然有二三种乙烯基体系聚合物确实有很好的性能,但光致抗蚀剂体系一般都具有更好的蚀刻适应性。与聚甲基丙烯酸甲酯或SiO_2相比较,除了负性光致抗蚀剂外,乙烯基聚合物的蚀刻选择性和蚀刻方位对三种蚀刻技术都是相当稳定的。
Plasma and reactive ion etch rates for a group of vinyl polymer resists and photoresists, as well as ion milling etch rates, were determined; and it was found that changing vinyl side group substituents or changing photoresists, etc., during synthesis Various factors affect the etch rate. It has been observed that vinyl polymer resists containing both pendant and unsaturated pendant groups, as well as negative printing systems, have low etch rates and good etch compatibility. Although two or three vinyl polymers do perform well, photoresist systems generally have better etch compatibility. Etch selectivity and etch orientation of the vinyl polymer are quite stable to all three etching techniques, except negative photoresist, compared to polymethylmethacrylate or SiO 2.